Channel Models for Multi-Level Cell Flash Memories Based on Empirical Error Analysis
نویسندگان
چکیده
منابع مشابه
Verify level control criteria for multi-level cell flash memories and their applications
InM-bit/cell multi-level cell (MLC) flash memories, it is more difficult to guarantee the reliability of data asM increases. The reason is that anM-bit/cell MLC has 2M states whereas a single-level cell (SLC) has only two states. Hence, compared to SLC, the margin of MLC is reduced, thereby making it sensitive to a number of degradation mechanisms such as cell-to-cell interference and charge le...
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ژورنال
عنوان ژورنال: IEEE Transactions on Communications
سال: 2016
ISSN: 0090-6778
DOI: 10.1109/tcomm.2016.2584602